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1653nm DFB Chip

1. Product Features:
Operating wavelength: 1650nm, 1653nm;
Operating temperature range: 0℃～45℃;
Power: ≥80mW

2. Application Field: Light source for methane gas detection

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VCSEL

1.Optional Products：

①1.850nm 50Gbit/s PAM4 Datacom VCSEL

②2.940nm 3D Sense VCSEL

③3.940nm High Power VCSEL

2.Application Fields:

① 50G/200G/400G Ethernet; data centers; data communication optical modules.

② Proximity sensing; consumer electronics; auto-focus; laser lighting.

③ Laser pumping, autonomous driving, bio-medical, virtual reality.

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1310nm CW DFB Chip

1.The 1310nm CW high-power edge-emitting laser chip is a waveguide structure grown by Fujian Zhongke Guangxin (Litecore) on an N-type InP substrate, which includes a multi-quantum well (MQW) active layer and a periodic grating. It features a design with low threshold current, high slope efficiency, and excellent high-temperature performance.

2.Product Highlights: Currently in the customer validation phase; etc.

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1550nm high power distributed feedback laser (DFB)

• 1550nm high power distributed feedback laser (DFB) is a CW InP MQW laser diode.
It shows high thermal stability, high side-mode suppression ratios (SMSR), and low relative intensity noise (RIN).
power ≥100mW；Linewidth 300KHz ,RIN ＜-155dB/Hz
• Applications: DWDM, silicon photonics light sources

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SOA

SOA is a laser diode with InGaAsP strain multiple quantum well buried heterojunction (BH) or ridge waveguide (RWG) structure with wavelengths encompassing O Band, C Band, and L Band.

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SLD

SLDs are laser diodes with InGaAsP strain multiple quantum well buried heterojunction (BH) or ridge waveguide (RWG) structures with wavelengths encompassing C Band, L Band, and U Band.

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50G 1342nm EML

1. The 50G 1342nm EML integrates an electro-absorption modulator (EAM) and a semiconductor optical amplifier (SOA) on a DFB chip using the Butt-joint docking mode, which provides high power and high extinction ratio characteristics for high-speed optical communication and data transmission.

2. Application：

· 50G PON OLT

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50G CWDM EML

1. 50G CWDM EML utilizes Butt-joint docking mode to integrate an electro-absorption modulator (EAM) on the DFB chip, which provides a high extinction ratio and is suitable for high-speed optical communication and data transmission.

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10G 1577 EML

The 10G 1577 EML is a buried heterostructure (BH) electro-absorption modulated laser (EML) chip that provides high-performance solutions for FTTH applications such as 10G EPON OLT, XGPON and XGSPON OLT. It also has an integrated SOA module chip, which enables the chip to have higher output power.

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