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Litecore BHB55X1A1Z high power distributed feedback laser (DFB)

Litecore BHB55X1A1Z high power distributed feedback laser (DFB) is a CW InP MQW laser diode.
It shows high thermal stability, high side-mode suppression ratios (SMSR), and low relative intensity noise (RIN).
power ≥100mW；Linewidth 300KHz ,RIN ＜-155dB/Hz

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SOA

SOA is a laser diode with InGaAsP strain multiple quantum well buried heterojunction (BH) or ridge waveguide (RWG) structure with wavelengths encompassing O Band, C Band, and L Band.

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SLD

SLDs are laser diodes with InGaAsP strain multiple quantum well buried heterojunction (BH) or ridge waveguide (RWG) structures with wavelengths encompassing C Band, L Band, and U Band.

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50G 1342nm EML

The 50G 1342nm EML integrates an electro-absorption modulator (EAM) and a semiconductor optical amplifier (SOA) on a DFB chip using the Butt-joint docking mode, which provides high power and high extinction ratio characteristics for high-speed optical communication and data transmission.

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50G CWDM EML

50G CWDM EML utilizes Butt-joint docking mode to integrate an electro-absorption modulator (EAM) on the DFB chip, which provides a high extinction ratio and is suitable for high-speed optical communication and data transmission.

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10G 1577 EML

The 10G 1577 EML is a buried heterostructure (BH) electro-absorption modulated laser (EML) chip that provides high-performance solutions for FTTH applications such as 10G EPON OLT, XGPON and XGSPON OLT. It also has an integrated SOA module chip, which enables the chip to have higher output power.

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25G DFB

The 25G DFB is a 25Gbps directly tunable laser diode with an AlGaInAs quantum well ridge waveguide (RWG) structure. This high-efficiency, high-throughput semiconductor laser is suitable for high-speed optical communications and data transmission.

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10G DFB

The 10G DFB is a 10Gbps directly tunable laser diode with an AlGaInAs quantum well ridge waveguide (RWG) structure. This high-efficiency, high-throughput semiconductor laser is suitable for high-speed optical communications and data transmission.

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2.5G 1490 DFB BH

The 2.5G 1490 DFB BH is a 2.5Gbps directly tunable laser diode with an InGaAsP strain multiple quantum well buried heterojunction (BH) structure with scalable operating temperatures from -40 to 85°C. It is designed for high speed and high throughput optical communications. This high-efficiency, high-throughput semiconductor laser is suitable for high-speed optical communications and data transmission.

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